Total: 150
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
Terminal installation
pedestal,Terminal installation
bulk
TR
TR,CT
pipe
TR,CT,bulk
TR,bulk
bulk,bulk
Automotive, AEC-Q101
Military, MIL-PRF-19500/503
Military, MIL-PRF-19500/260
Military, MIL-PRF-19500/304
SBR®
Automotive, AEC-Q101, SBR®
ECOPACK®2
Automotive, AEC-Q101, ECOPACK®2
TURBOSWITCH™
On sale
Final sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
Schottky barrier
SiC Schottky
Standard type, reverse polarity
Level barrier
100 V
1200 V
40 V
200 V
400 V
600 V
1000 V
800 V
30 V
150 V
120 V
60 V
650 V
45 V
900 V
12A
-
550 mV @ 12 A
670 mV @ 12 A
790 mV @ 12 A
820 mV @ 12 A
600 mV @ 12 A
730 mV @ 12 A
710 mV @ 12 A
660 mV @ 12 A
800 mV @ 12 A
830 mV @ 12 A
680 mV @ 12 A
1.75 V @ 12 A
1.2 V @ 30 A
1.5 V @ 20 A
570 mV @ 12 A
1.5 V @ 37.7 A
1.35 V @ 38 A
2.3 V @ 240 A
1.5 V @ 38 A
500 mV @ 12 A
480 mV @ 12 A
780 mV @ 12 A
520 mV @ 12 A
2.9 V @ 12 A
2 V @ 12 A
1.45 V @ 12 A
1.1 V @ 12 A
2.2 V @ 12 A
1.7 V @ 12 A
2.95 V @ 12 A
3.4 V @ 12 A
1.9 V @ 12 A
35 ns
20 ns
150 ns
30 ns
100 ns
90 ns
45 ns
0 ns
55 ns
27.33 ns
200 ns
21 ns
155 ns
50 µA @ 600 V
20 µA @ 600 V
10 µA @ 400 V
5 µA @ 1000 V
10 µA @ 1000 V
5 µA @ 600 V
10 µA @ 600 V
10 µA @ 200 V
100 µA @ 100 V
500 µA @ 40 V
100 µA @ 600 V
5 µA @ 400 V
10 µA @ 100 V
5 µA @ 200 V
5 µA @ 800 V
10 µA @ 800 V
100 µA @ 45 V
100 µA @ 1200 V
30 µA @ 600 V
30 µA @ 150 V
25 µA @ 120 V
50 µA @ 45 V
55 µA @ 100 V
120 µA @ 45 V
90 µA @ 60 V
350 µA @ 60 V
95 µA @ 100 V
120 µA @ 100 V
75 µA @ 120 V
55 µA @ 120 V
500 µA @ 45 V
25 µA @ 50 V
10 µA @ 1200 V
250 µA @ 100 V
150 µA @ 600 V
50 µA @ 1000 V
300 µA @ 45 V
250 µA @ 120 V
200 µA @ 120 V
500 µA @ 120 V
45 µA @ 600 V
120 µA @ 650 V
150 µA @ 650 V
360 µA @ 30 V
1124pF @ 4V,1MHz
1180pf @ 1V,1MHz
930pF @ 1V,1MHz
115pF @ 10V,1MHz
600pF @ 0V,1MHz
1000pF @ 4V,1MHz
750pF @ 0V,1MHz
530pF @ 0V,1MHz