Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR,CT
Final sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
100 V
45 V
12A
550 mV @ 12 A
730 mV @ 12 A
-
100 µA @ 45 V
55 µA @ 100 V