Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
CoolSiC™+
On sale
No recovery time > 500mA(Io)
SiC Schottky
1200 V
650 V
22.8A(DC)
1.7 V @ 20 A
1.95 V @ 8 V
-
0 ns
40 µA @ 650 V
40 µA @ 1200 V
866pF @ 1V,100kHz
365pF @ 1V,1MHz