Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
30 V
1.5A(DC)
590 mV @ 1.5 A
535 mV @ 1.5 A
580 mV @ 1.5 A
-
25 ns
33 ns
75 µA @ 40 V
100 µA @ 40 V
80 µA @ 30 V
85pF @ 2V,1MHz
170pF @ 0V,1MHz
60pF @ 0V,1MHz