Total: 99
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
Base installation
Terminal installation
pedestal,Terminal installation
bulk
TR
TR,CT
CT
pipe
TR,CT,bulk
bulk,pipe
TR,TR
Automotive, AEC-Q101
SWITCHMODE™
Military, MIL-PRF-19500/723
SBR®
TrenchSBR
ECOPACK®2
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Standard recovery>500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
Schottky barrier
SiC Schottky
Level barrier
20 V
100 V
80 V
1200 V
40 V
50 V
200 V
400 V
600 V
1000 V
800 V
30 V
150 V
250 V
60 V
300 V
45 V
1700 V
15 V
175 V
1600 V
25A
1 V @ 10 mA
-
1.2 V @ 10 A
1.75 V @ 25 A
450 mV @ 25 A
1.18 V @ 78.5 A
1.18 V @ 100 A
600 mV @ 5 A
1.1 V @ 30 A
440 mV @ 25 A
460 mV @ 25 A
480 mV @ 25 A
950 mV @ 25 A
610 mV @ 20 A
775 mV @ 20 A
910 mV @ 25 A
640 mV @ 25 A
540 mV @ 25 A
520 mV @ 25 A
550 mV @ 25 A
600 mV @ 25 A
610 mV @ 25 A
3.4 V @ 25 A
1.15 V @ 40 A
2.05 V @ 25 A
2.7 V @ 25 A
300 ns
50 ns
35 ns
0 ns
190 ns
10 µA @ 400 V
10 µA @ 200 V
100 µA @ 200 V
10 µA @ 100 V
10 µA @ 800 V
400 µA @ 60 V
150 µA @ 60 V
500 µA @ 100 V
500 µA @ 50 V
100 µA @ 400 V
2 mA @ 20 V
500 µA @ 80 V
20 µA @ 150 V
20 µA @ 100 V
1 mA @ 45 V
40 µA @ 1700 V
15 mA @ 15 V
100 µA @ 1000 V
25 µA @ 200 V
10 µA @ 250 V
60 µA @ 600 V
10 µA @ 1600 V
3 mA @ 20 V
3 mA @ 30 V
20 µA @ 50 V
300 µA @ 45 V
1.2 mA @ 45 V
1.2 mA @ 30 V
1.2 mA @ 15 V
120 µA @ 50 V
5.2 µA @ 1200 V
700 nA @ 1200 V
2025pF @ 1V,100kHz
1650pF @ 5V,1MHz
2000pF @ 5V,1MHz
1000pF @ 5V,1MHz