Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
-
Surface mount
bulk
TR,bulk
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
standard
Schottky barrier
1200 V
30 V
600mA(DC)
620 mV @ 500 mA
1.6 V @ 600 mA
200 µA @ 30 V
27 µA @ 1200 V