Total: 13
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
pipe
TR,bulk
bulk,pipe
CoolSiC™+
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
600 V
650 V
9A(DC)
1.75 V @ 6 A
1.7 V @ 9 A
1.8 V @ 9 A
2.1 V @ 9 A
1.6 V @ 9 A
-
0 ns
200 µA @ 650 V
80 µA @ 600 V
160 µA @ 650 V
1.6 mA @ 650 V
27 µA @ 600 V
310 µA @ 650 V
361pF @ 1V,100kHz
270pF @ 1V,1MHz
280pF @ 1V,1MHz