Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
On sale
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
Schottky barrier
SiC Schottky
650 V
14A(DC)
1.75 V @ 10 A
1.75 V @ 12 A
-
0 ns
200 µA @ 650 V
575pF @ 1V,100kHz
665pF @ 1V,100kHz