Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
CoolSiC™+
On sale
No recovery time > 500mA(Io)
SiC Schottky
650 V
18A(DC)
-
1.75 V @ 10 A
0 ns
200 µA @ 650 V
20 µA @ 420 V
575pF @ 1V,100kHz
302pF @ 1V,1MHz