Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT,bulk
CoolSiC™+
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
600 V
3A(DC)
1.25 V @ 3 A
2.3 V @ 3 A
75 ns
0 ns
15 µA @ 600 V
30 µA @ 300 V
-
60pF @ 1V,1MHz