Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
60 V
7A
600 mV @ 7 A
-
200 µA @ 60 V
375pF @ 4V,1MHz