Total: 21
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TR,CT
pipe
TR,bulk
bulk,pipe
TB
TURBOSWITCH™
CoolSiC™+
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
600 V
-
650 V
4A(DC)
1 V @ 200 mA
1.75 V @ 4 A
1.8 V @ 4 A
1.9 V @ 4 A
1.7 V @ 4 A
1.6 V @ 4 A
2.3 V @ 4 A
3 µs
0 ns
55 ns
50 µA @ 600 V
1 nA @ 125 V
25 µA @ 600 V
140 µA @ 650 V
20 µA @ 650 V
70 µA @ 650 V
670 µA @ 650 V
200 µA @ 600 V
16pF @ 650V,1MHz
130pF @ 1V,1MHz
80pF @ 1V,1MHz
150pF @ 0V,1MHz
150pF @ 1V,1MHz