Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
TR
On sale
No recovery time > 500mA(Io)
SiC Schottky
1200 V
36A(DC)
1.8 V @ 15 A
0 ns
200 µA @ 200 µA
906pF @ 1V,1MHz