Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
400mA(DC)
500 mV @ 400 mA
-
40 µA @ 30 V
20pF @ 25V,1MHz