Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
SBR®
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Level barrier
60 V
900mA
530 mV @ 750 mA
-
100 µA @ 45 V
19pF @ 25V,1MHz