Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
1.16A(DC)
560 mV @ 1 A
5 ns
20 µA @ 30 V
28pF @ 30V,1MHz