Total: 41
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
CT
TR,TR,CT
CT,TB
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
20 V
40 V
30 V
350mA(DC)
600 mV @ 200 mA
1 V @ 300 mA
810 mV @ 350 mA
750 mV @ 200 mA
-
10 ns
1.6 ns
10 µA @ 20 V
5 µA @ 30 V
5 µA @ 20 V
5 µA @ 10 V
12 µA @ 30 V
25 µA @ 40 V
20pF @ 0V,1MHz
50pF @ 0V,1MHz
28pF @ 0V,1MHz
6pF @ 25V,1MHz
30pF @ 0V,1MHz