Total: 5
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
10 V
45 V
750mA(DC)
600 mV @ 200 mA
380 mV @ 100 mA
490 mV @ 750 mA
740 mV @ 750 mA
-
5 ns
3 ns
12 ns
100 µA @ 30 V
50 µA @ 40 V
6 µA @ 10 V
10 µA @ 45 V
10pF @ 10V,1MHz
26pF @ 10V,1MHz
25pF @ 25V,1MHz
12pF @ 10V,1MHz