Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
60 V
900mA(DC)
530 mV @ 750 mA
12 ns
100 µA @ 45 V
17pF @ 25V,1MHz