Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
pipe
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
600 V
650 V
41A(DC)
1.35 V @ 20 A
2 V @ 23 A
0 ns
120 ns
50 µA @ 600 V
67 µA @ 420 V
-
970pF @ 1V,1MHz