Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT,bulk
TR,bulk
CoolSiC™+
On sale
stop production
No recovery time > 500mA(Io)
SiC Schottky
600 V
5.6A
1.9 V @ 4 A
2.3 V @ 4 A
0 ns
50 µA @ 600 V
25 µA @ 600 V
130pF @ 1V,1MHz
80pF @ 1V,1MHz