TBRapid recovery=< 500ns,> 200mA(Io)1 V @ 100 mA-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Through-Hole

packing

TB

series

Part status

On sale

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

standard

Voltage DC reverse (Vr) (maximum)

75 V

Current average rectification (Io)

250mA(DC)

300mA

Voltage at different If - forward (Vf)

1 V @ 100 mA

Reverse recovery time (trr)

4 ns

Current - reverse leakage at different Vr

5 µA @ 75 V

Capacitance at different Vr and F

2pF @ 0V,1MHz