Total: 5
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR,CT
pipe
CoolSiC™+
On sale
stop production
Standard recovery>500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
1500 V
1200 V
10A(DC)
49A(DC)
56A(DC)
1.8 V @ 20 A
-
600 ns
0 ns
100 µA @ 1300 V
200 µA @ 1200 V
123 µA @ 1200 V
1130pF @ 1V,1MHz
1050pF @ 1V,1MHz