Total: 10
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
TR,CT,bulk
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
50 V
30 V
500mA(DC)
500mA
550 mV @ 500 mA
-
10 ns
100 µA @ 35 V
50 µA @ 30 V
30 µA @ 15 V
50 µA @ 25 V
5 µA @ 30 V
40 µA @ 30 V
90pF @ 0V,1MHz
16pF @ 10V,1MHz
17pF @ 10V,1MHz
18pF @ 10V,1MHz
125pF @ 0V,1MHz
20pF @ 25V,1MHz