Total: 7
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR,CT,bulk
POWERMITE®
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
30 V
1A
550 mV @ 1 A
-
5.6 ns
1 mA @ 30 V
500 µA @ 40 V
50 µA @ 40 V
55pF @ 4V,1MHz