Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
SBR®
stop production
Standard recovery>500ns,> 200mA(Io)
Level barrier
40 V
500mA
460 mV @ 500 mA
-
75 µA @ 40 V
34pF @ 4V,1MHz