Total: 5
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
SBR®
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Schottky barrier
Level barrier
100 V
200 V
150 V
2A
800 mV @ 2 A
-
8.02 ns
50 µA @ 100 V
5 µA @ 200 V
100 µA @ 150 V
75 µA @ 150 V