Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
TR,CT
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
100 V
80 V
3A
850 mV @ 3 A
-
500 µA @ 100 V
500 µA @ 80 V
180pF @ 4V,1MHz