Total: 14
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TR,CT
TR,CT,bulk
TR,bulk
bulk,bulk
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
50 V
60 V
3A
740 mV @ 3 A
-
600 µA @ 60 V
150 µA @ 60 V
500 µA @ 60 V
500 µA @ 50 V
600 µA @ 50 V
180pF @ 4V,1MHz