Total: 13
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
On sale
Final sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
50 V
60 V
5A
670 mV @ 5 A
-
150 µA @ 60 V
500 µA @ 60 V
500 µA @ 50 V
1 mA @ 60 V
1 mA @ 50 V
380pF @ 4V,1MHz