Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
TR,bulk
SBR®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
Level barrier
20 V
30 V
700mA
550 mV @ 700 mA
-
10 ns
80 µA @ 15 V
50 µA @ 20 V
25pF @ 10V,1MHz
26pF @ 10V,1MHz