Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
TR,bulk
On sale
Not applicable to new design
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
3A
420 mV @ 3 A
20 ns
1.4 mA @ 15 V
880pF @ 0V,1MHz
90pF @ 10V,1MHz