Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
45 V
2A
500 mV @ 2 A
-
300 µA @ 45 V
140pF @ 4V,1MHz