Total: 25
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
bulk
TR
TB
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
60 V
45 V
2A
500 mV @ 2 A
-
500 µA @ 40 V
500 µA @ 45 V