Total: 22
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TR,CT
pipe
bulk,pipe
SWITCHMODE™
CoolSiC™+
HEXFRED®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
600 V
650 V
8A
8A(DC)
11.6A(DC)
10.1A(DC)
1.7 V @ 8 A
-
0 ns
80 ns
55 ns
120 ns
5 µA @ 600 V
10 µA @ 600 V
100 µA @ 600 V
40 µA @ 650 V
300 µA @ 600 V
140 µA @ 650 V
90 µA @ 650 V
280 µA @ 650 V
336pF @ 1V,100kHz
450pF @ 0V,1MHz
44pF @ 650V,1MHz
310pF @ 1V,1MHz
250pF @ 1V,1MHz
280pF @ 0V,1MHz