Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT,bulk
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
23 V
1A(DC)
500 mV @ 900 mA
-
50 µA @ 15 V
35pF @ 5V,1MHz