Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR,CT
Final sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
standard
Schottky barrier
100 V
80 V
30 V
5A
12.5A
850 mV @ 5 A
-
500 µA @ 100 V
500 µA @ 80 V
1 µA @ 30 V
380pF @ 4V,1MHz