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Diode rectifier

Total: 7

NVDSH20120C
Brand：ON
Stock：64174
Store: ShenZhen/Hongkong
Description：SIC DIODE GEN2.0 1200V TO247-2L
Offer
Price：1+
￥17.36
FFSB20120A
Brand：ON
Stock：5676
Store: ShenZhen/Hongkong
Description：DIODE SBD 10A 120V D2PAK-3
Offer
Price：1+
￥10.17
FFSP20120A
Brand：ON
Stock：66746
Store: ShenZhen/Hongkong
Description：DIODE SCHOT 1200V 20A TO220-2L
Offer
Price：1+
￥10.09
FFSH20120A-F155
Brand：ON
Stock：22287
Store: ShenZhen/Hongkong
Description：SIC DIODE GEN1.0 TO247-2L LL
Offer
Price：1+
￥11.41
NDSH20120C
Brand：ON
Stock：42693
Store: ShenZhen/Hongkong
Description：SIC DIODE GEN2.0 1200V TO
Offer
Price：1+
￥8.00
FFSH20120A
Brand：ON
Stock：12071
Store: ShenZhen/Hongkong
Description：DIODE SCHOTTKY 1.2KV 30A TO247-2
Offer
Price：1+
￥23.80
FFSB20120A-F085
Brand：ON
Stock：48586
Store: ShenZhen/Hongkong
Description：1200V 20A AUTO SIC SBD
Offer
Price：1+
￥15.06
Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

Through-Hole

packing

pallet

TR

TR,CT

pipe

series

Automotive, AEC-Q101

Part status

On sale

Speed

Rapid recovery=< 500ns,> 200mA(Io)

No recovery time > 500mA(Io)

Diode type

Schottky barrier

SiC Schottky

Voltage DC reverse (Vr) (maximum)

1200 V

Current average rectification (Io)

20A

30A(DC)

26A(DC)

32A(DC)

Voltage at different If - forward (Vf)

1.75 V @ 20 A

Reverse recovery time (trr)

-

0 ns

Current - reverse leakage at different Vr

200 µA @ 1200 V

Capacitance at different Vr and F

1220pF @ 1V,100KHz

1480pF @ 1V,100kHz

1220pF @ 1V,100kHz

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