510 mV @ 1 A Level barrier-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

packing

TR

TR,CT

series

SBR®

Part status

On sale

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

Level barrier

Voltage DC reverse (Vr) (maximum)

40 V

30 V

Current average rectification (Io)

1A

Voltage at different If - forward (Vf)

510 mV @ 1 A

Reverse recovery time (trr)

-

15 ns

Current - reverse leakage at different Vr

500 µA @ 40 V

100 µA @ 40 V

150 µA @ 30 V

Capacitance at different Vr and F

-

30pF @ 10V,1MHz