Total: 6
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
30 V
3A
450 mV @ 3 A
-
1 mA @ 30 V
2 mA @ 40 V
300 µA @ 40 V
180pF @ 4V,1MHz