Through-Hole Rapid recovery=< 500ns,> 200mA(Io)Schottky barrier840 mV @ 10 A-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Through-Hole

packing

pipe

series

Part status

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

Schottky barrier

Voltage DC reverse (Vr) (maximum)

40 V

30 V

Current average rectification (Io)

10A

Voltage at different If - forward (Vf)

840 mV @ 10 A

Reverse recovery time (trr)

-

Current - reverse leakage at different Vr

100 µA @ 30 V

100 µA @ 40 V

Capacitance at different Vr and F

400pF @ 4V,1MHz