Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
45 V
8A
550 mV @ 8 A
-
1 mA @ 45 V
550pF @ 4V,1MHz