Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
500mA
450 mV @ 500 mA
-
50 µA @ 30 V
120pF @ 0V,1MHz