Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
80 V
30 V
500mA(DC)
500mA
800 mV @ 500 mA
-
11 ns
100 µA @ 30 V
5 µA @ 80 V
19pF @ 5V,1MHz
15pF @ 5V,1MHz