Total: 12
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR,CT
pipe
TR,bulk
bulk,pipe
Automotive, AEC-Q101
CoolSiC™+
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
1500 V
1200 V
600 V
650 V
700 V
10A(DC)
10A
5A(DC)
24A(DC)
31.9A(DC)
38A(DC)
7.5A(DC)
1.8 V @ 10 A
-
150 ns
30 ns
0 ns
5 µA @ 600 V
15 µA @ 1500 V
200 µA @ 700 V
120 µA @ 1200 V
18 µA @ 1200 V
62 µA @ 12 V
62 µA @ 1200 V
180 µA @ 1200 V
240 µA @ 1200 V
1.7 mA @ 650 V
140pF @ 4V,1MHz
353pF @ 1V,1MHz
525pF @ 1V,1MHz
29pF @ 800V,1MHz
300pF @ 1V,1MHz
250pF @ 1V,1MHz
500pF @ 1V,1MHz
375pF @ 1V,1MHz
580pF @ 1V,1MHz