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Diode rectifier

Total: 8

JAN1N4500
Brand：Microchip
Stock：27194
Store: ShenZhen/Hongkong
Description：ZENER DIODE
Offer
JANTXV1N4500
Brand：Microchip
Stock：35045
Store: ShenZhen/Hongkong
Description：ZENER DIODE
Offer
Price：1+
￥53.28
1N4500
Brand：Microchip
Stock：49627
Store: ShenZhen/Hongkong
Description：SWITCHING DIODE
Offer
Price：1+
￥23.77
JANTX1N6641US
Brand：Microchip
Stock：28611
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 50V 300MA B-MELF
Offer
Price：1+
￥13.74
JAN1N6641US
Brand：Microchip
Stock：56072
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 50V 300MA B-MELF
Offer
Price：1+
￥12.19
JANTX1N6641
Brand：Microchip
Stock：22100
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 50V 300MA AXIAL
Offer
Price：1+
￥10.60
JAN1N6641
Brand：Microchip
Stock：62502
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 50V 300MA AXIAL
Offer
Price：1+
￥8.35
JANTX1N4500
Brand：Microchip
Stock：20610
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 80V DO35
Offer
Price：1+
￥56.30
Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

Through-Hole

packing

bulk

series

Military, MIL-PRF-19500/403

Military, MIL-PRF-19500/609

Part status

On sale

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Small signal=< 200mA(Io),arbitrarily speed

Diode type

standard

Voltage DC reverse (Vr) (maximum)

75 V

80 V

50 V

-

Current average rectification (Io)

-

300mA

300mA(DC)

Voltage at different If - forward (Vf)

1.1 V @ 300 mA

Reverse recovery time (trr)

5 ns

6 ns

Current - reverse leakage at different Vr

-

100 nA @ 80 V

100 nA @ 50 V

100 nA @ 75 V

100 µA @ 50 V

Capacitance at different Vr and F

-

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