Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,bulk
POWERMITE®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
10 V
1A
415 mV @ 2 A
-
500 µA @ 10 V