Total: 5
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
TR,bulk
SBR®
Automotive, AEC-Q101, TrenchSBR
On sale
stop production
Not applicable to new design
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Schottky barrier
Level barrier
30 V
10 V
2A
400 mV @ 2 A
-
20 ns
500 µA @ 30 V
400 µA @ 30 V
1.25 mA @ 15 V
250 µA @ 10 V
75pF @ 10V,1MHz