Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
170 V
30A(DC)
890 mV @ 30 A
-
50 µA @ 170 V
821pF @ 1V,1MHz