Total: 9
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
pipe
TB
TURBOSWITCH™
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
600 V
650 V
4A
7.6A(DC)
7.7A(DC)
8.6A(DC)
4A(DC)
1.75 V @ 4 A
-
0 ns
55 ns
50 µA @ 600 V
40 µA @ 650 V
200 µA @ 650 V
200 mA @ 650 V
258pF @ 1V,100kHz
247pF @ 1V,100kHz
200pF @ 0V,1MHz